X = and Y = are two 5-bit binary numbers represented in two’s complement format. The sum of X and Y represented in two’s complement format using 6 bits is

**A. ** 100111

**B. ** 0010000

**C. ** 000111

**D. ** 101001

**Answer : ****Option C**

**Explaination / Solution: **

MSB of Y is 1, thus it is negative number and X is positive number

In signed two’s complements from 7 is

Workspace

Report

The following binary values were applied to the X and Y inputs of NAND latch
shown in the figure in the sequence indicated below :

**A. ** P = ,Q = P = ,Q = P = ,Q = or P = ,Q =

**B. ** P = ,Q = P = ,Q = or P = ,Q = P = ,Q =

**C. ** P = ,Q = P = ,Q = P = ,Q = or P = ,Q =

**D. ** P = ,Q = P = ,Q = P = ,Q =

**Answer : ****Option C**

**Explaination / Solution: **

No Explaination.

X = ,Y = X = ,Y = X = Y =

The corresponding stable P Q, output will be

No Explaination.

Workspace

Report

In the Digital-to-Analog converter circuit shown in the figure below, V_{R} = 1V and R = 1kΩ

**A. ** 31.25μA

**B. ** 62.5μA

**C. ** 125μA

**D. ** 250μA

**Answer : ****Option B**

**Explaination / Solution: **

The current i is

Workspace

Report

Consider the Op-Amp circuit shown in the figure. **A. ** -(π/2) and π/2
**B. ** 0 and π/2
**C. ** -π and 0
**D. ** -(π/2) and 0
**Answer : ****Option C**

**Explaination / Solution: **

If then the minimum and maximum
values of ϕ (in radians) are respectively

Workspace

Report

Group I lists four different semiconductor devices. match each device in Group I with its charactecteristic property in Group II

Group-I Group-II

(P) BJT (1) Population iniversion

(Q) MOS capacitor (2) Pinch-off voltage

(R) LASER diode (3) Early effect

(S) JFET (4) Flat-band voltage

In BJT as the B-C reverse bias voltage increases, the B-C space charge region width increases which x

In JFET the gate to source voltage that must be applied to achieve pinch off
voltage is described as pinch off voltage and is also called as turn voltage or
threshold voltage.

In LASER population inversion occurs on the condition when concentration of
electrons in one energy state is greater than that in lower energy state, i.e. a non
equilibrium condition.

In MOS capacitor, flat band voltage is the gate voltage that must be applied to
create flat ban condition in which there is no space charge region in semiconductor
under oxide.

Therefore

BJT : Early effect

MOS capacitor : Flat-band voltage

LASER diode : Population inversion

JFET : Pinch-off voltage

Workspace

Report

The figure shows the high-frequency capacitance - voltage characteristics of Metal/Sio2/silicon (MOS) capacitor having an area of 1 × 10-4 cm2. Assume that the permittivities (ε0εr) of silicon and Sio are 1 × 10-12 F/cm and 3.5 × 10-13 F/ cm respectively.

Consider the following statements about the C − V characteristics plot :

S1 : The MOS capacitor has as n-type substrate

S2 : If positive charges are introduced in the oxide, the C − V polt will shift to the left.

Then which of the following is true?

Depletion region will not be formed if the MOS capacitor has n type substrate but from C-V characteristics, C reduces if V is increased. Thus depletion region must be formed. Hence S1 is false If positive charges is introduced in the oxide layer, then to equalize the effect the applied voltage V must be reduced. Thus the C − V plot moves to the left. Hence S2 is true.

Workspace

Report

The raised cosine pulse p(t) is used for zero ISI in digital communications. The
expression for p(t) with unity roll-off factor is given by

**A. ** −0.5

**B. ** 0

**C. ** 0.5

**D. ** ∞

**Answer : ****Option C**

**Explaination / Solution: **

The value of p(t) at t = 1/W is

Workspace

Report

An air-filled rectangular waveguide has inner dimensions of 3 cm × 2 cm.
The wave impedance of the TE_{2 }mode of propagation in the waveguide at a
frequency of 30 GHz is (free space impedance η0 = 377Ω)

**A. ** 308 Ω

**B. ** 355 Ω

**C. ** 400 Ω

**D. ** 461 Ω

**Answer : ****Option C**

**Explaination / Solution: **

Workspace

Report

A right circularly polarized (RCP) plane wave is incident at an angle 60^{0} to the
normal, on an air-dielectric interface. If the reflected wave is linearly polarized,
the relative dielectric constant ξ_{r} is.

**A. ** √2

**B. ** √3

**C. ** 2

**D. ** 3

**Answer : ****Option D**

**Explaination / Solution: **

No Explaination.

No Explaination.

Workspace

Report

The correct full wave rectifier circuit is

**A. **

**B. **

**C. **

**D. **

**Answer : ****Option C**

**Explaination / Solution: **

Workspace

Report