EC GATE 2016 PAPER 01 - Online Test
Q1. If q-a = 1/r and r-b = 1/s and S-c = 1/q, the value of abc is ____________.
Answer : Option C
Explaination / Solution:
No Explaination.
Q2. P, Q, R and S are working on a project. Q can finish the task in 25 days, working alone for 12 hours a day. R can finish the task in 50 days, working alone for 12 hours per day. Q worked 12 hours a day but took sick leave in the beginning for two days. R worked 18 hours a day on all days. What is the ratio of work done by Q and R after 7 days from the start of the project?
Answer : Option C
Explaination / Solution:
Q3. A small percentage of impurity is added to an intrinsic semiconductor at 300 K. Which one of
the following statements is true for the energy band diagram shown in the following figure?
Answer : Option A
Explaination / Solution:
New energy level is near to conduction band, so it is pentavalent atoms to form n-type semiconductor.
Q4. Consider the following statements for a metal oxide semiconductor field effect transistor
(MOSFET):
P: As channel length reduces, OFF-state current increases.
Q:As channel length reduces, output resistance increases.
R: As channel length reduces, threshold voltage remains constant.
S: As channel length reduces, ON current increases.
Which of the above statements are INCORRECT?
Answer : Option C
Explaination / Solution:
Q5. What is the voltage Vout in the following circuit?
Answer : Option C
Explaination / Solution:
The transfer characteristics of the CMOS inverter is as follows
Since the inverter is connected in feedback loop formed by connecting
10XΩ resistor between
the output and input, the output goes and stays at the middle of the characteristics
Va Switching threshold of inverter
Q6. Consider a silicon sample at T=300K, with a uniform donor density 
illuminated uniformly such that the optical generation rate
is 
throughout the sample. The incident radiation is turned off at 𝑡=0.
Assume low-level injection to be valid and ignore surface effects. The carrier lifetimes are 
illuminated uniformly such that the optical generation rate
is throughout the sample. The incident radiation is turned off at 𝑡=0.
Assume low-level injection to be valid and ignore surface effects. The carrier lifetimes are The hole concentration at t = 0 and the hole concentration at t = 0.3μs, respectively, are
Answer : Option A
Explaination / Solution:
Q7. The block diagram of a frequency synthesizer consisting of a Phase Locked Loop (PLL) and a
divide-by-𝑁 counter (comprising ÷2, ÷4, ÷8, ÷16 outputs) is sketched below. The synthesizer is
excited with a 5 kHz signal (Input 1). The free-running frequency of the PLL is set to20 kHz.
Assume that the commutator switch makes contacts repeatedly in the order 1-2-3-4.
The corresponding frequencies synthesized are:
Answer : Option A
Explaination / Solution:
No Explaination.
Q8. The propagation constant of a lossy transmission line is (2 + 𝑗5) m-1 and its characteristic impedance is (50 + j0)𝜔 at 𝜔 = 106 rad s-1. The values of the line constants L, C, R, G are, respectively,
Answer : Option B
Explaination / Solution:
Q9. An antenna pointing in a certain direction has a noise temperature of 50K. The ambient
temperature is 290 K. The antenna is connected to a pre-amplifier that has a noise figure of 2
dB and an available gain of 40 dB over an effective bandwidth of 12 MHz. The effective input
noise temperature Te for the amplifier and the noise power Pao at the output of the preamplifier,
respectively, are
Answer : Option A
Explaination / Solution:
No Explaination.
Q10. The electric field of a uniform plane wave travelling along the negative z direction is given by
the following equation:
This wave is incident upon a receiving antenna placed at the origin and whose radiated electric
field towards the incident wave is given by the following equation:
The polarization of the incident wave, the polarization of the antenna and losses due to the
polarization mismatch are, respectively,
Answer : Option C
Explaination / Solution:
No Explaination.
