Electronics Engineering - Online Test

Q1. P is a 16-bit signed integer. The 2’s complement representation of P is (F87B)16. The 2’s complement representation of 8*P is 
Answer : Option A
Explaination / Solution:
No Explaination.


Q2. The voltage gain Av of the circuit shown below is

Answer : Option D
Explaination / Solution:



Q3. The flux density at a point in space is given by  The value of constant k must be equal to 
Answer : Option A
Explaination / Solution:
No Explaination.


Q4. The DC current gain (β) of a BJT is 50. Assuming that the emitter injection efficiency is 0.995, the base transport factor is
Answer : Option B
Explaination / Solution:



Q5.
Group I lists four different semiconductor devices. match each device in Group I with its charactecteristic property in Group II
Group-I                                      Group-II
(P) BJT                                       (1) Population iniversion
(Q) MOS capacitor                     (2) Pinch-off voltage
(R) LASER diode                        (3) Early effect
(S) JFET                                     (4) Flat-band voltage
Answer : Option C
Explaination / Solution:

In BJT as the B-C reverse bias voltage increases, the B-C space charge region width increases which xB (i.e. neutral base width) > A change in neutral base width will change the collector current. A reduction in base width will causes the gradient in minority carrier concentration to increase, which in turn causes an increased in the diffusion current. This effect si known as base modulation as early effect.
In JFET the gate to source voltage that must be applied to achieve pinch off voltage is described as pinch off voltage and is also called as turn voltage or threshold voltage.
In LASER population inversion occurs on the condition when concentration of electrons in one energy state is greater than that in lower energy state, i.e. a non equilibrium condition.
In MOS capacitor, flat band voltage is the gate voltage that must be applied to create flat ban condition in which there is no space charge region in semiconductor under oxide. 
Therefore
                 BJT : Early effect
MOS capacitor : Flat-band voltage
  LASER diode : Population inversion
               JFET : Pinch-off voltage


Q6. A point Z has been plotted in the complex plane, as shown in figure below.

The plot of the complex number y = 1/z is
Answer : Option D
Explaination / Solution:


Z is having +ve real part and positive imaginary part (from the characteristics) So Y should have +ve real part and negative imaginary part.

Q7. Given two continuous time signals  which exist for t > 0, the convolution z(t) = x(t)* y(t) is
Answer : Option A
Explaination / Solution:



Q8. The raised cosine pulse p(t) is used for zero ISI in digital communications. The expression for p(t) with unity roll-off factor is given by

The value of p(t) at t = 1/W is
Answer : Option C
Explaination / Solution:



Q9. A lossy capacitor Cx, rated for operation at 5 kV, 50 Hz is represented by an equivalent circuit with an ideal capacitor Cp in parallel with a resistor Rp. The value Cp is found to be 0.102 µF and the value of Rp = 1.25 MΩ . Then the power loss and tan ∂ of the lossy capacitor operating at the rated voltage, respectively, 
Answer : Option C
Explaination / Solution:
No Explaination.


Q10. A voltage commutated chopper circuit, operated at 500Hz, is shown below.

If the maximum value of load current is 10A, then the maximum current through the main (M) and auxiliary (A) thyristors will be
Answer : Option A
Explaination / Solution: